Irfp2907 mouser

WebIRFP2907PBF +1 image Images are for reference only See Product Specifications Mouser #: 942-IRFP2907PBF Mfr. #: IRFP2907PBF Mfr.: Infineon Technologies Customer #: Description: MOSFET 75V 1 N-CH HEXFET 4.5mOhms 410nC Datasheet: IRFP2907PBF Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for … WebIRFP2907PBF. Mouser Part #. 942-IRFP2907PBF. Previous purchase. Infineon Technologies. MOSFET 75V 1 N-CH HEXFET 4.5mOhms 410nC. Datasheet. 6,800 On Order. View Dates.

IRFP2907PBF Infineon - MOSFETs - Octopart

WebOffer IRFP2907PBF IR from Kynix Semiconductor Hong Kong Limited.FETs - Single MOSFET N-CH 75V 209A TO247AC WebRoseville, MI. $25. AM/FM radio vintage/antique 50’s . West Bloomfield, MI. $25. Vintage 1994 Joe’s Place 4 Plastics Cups & 1991 Hard Pack 5 Different Camel Characters Lighters … each of you or both of you https://itsrichcouture.com

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WebOffers super junction (SJ) technologies, ideal for lighting and industrial SMPS applications. Offered in SuperSO8 & PQFN 3.3x3.3 packages & optimized for high-switching-frequency … WebIRFP2907 MOSFET. Datasheet pdf. Equivalent Type Designator: IRFP2907 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 470 W Maximum Drain-Source Voltage Vds : 75 V Maximum Gate-Source Voltage Vgs : 20 V Maximum Gate-Threshold Voltage Vgs (th) : 4 V Maximum Drain Current Id : 209 A WebInternational Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. The company was founded in 1947 and was headquartered in El Segundo, California. IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power ... csh22l

AUIRFP2907 Infineon / IR Mouser Europe

Category:IRFP2907 footprint & symbol by Infineon Technologies SnapEDA

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Irfp2907 mouser

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WebParameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 44 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 31 A IDM Pulsed Drain Current 170 PD @TC = 25°C Power Dissipation 380 W Linear Derating Factor 2.6 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 520 mJ IAR Avalanche Current 25 A EAR … WebThe company was founded in 1947 and was headquartered in El Segundo, California. IR provided a wide range of products including power management ICs, power MOSFETs, …

Irfp2907 mouser

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Web2 www.irf.com S D G Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.23mH RG = 25Ω, IAS = 81A, VGS =10V. Part not recommended for use above this value. WebContact Mouser (London) +44 (0) 1494-427500 Feedback. Change Location English GBP £ GBP € EUR $ USD United Kingdom. Incoterms:DDP All prices include duty and customs …

WebIRFP250NPbF HEXFET® Power MOSFET 08/18/10 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current 120 PD @TC = 25°C Power Dissipation 214 W Linear Derating Factor 1.4 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche … WebAUIRFP2907 Infineon Technologies MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms datasheet, inventory & pricing.

WebIRFP2907 IRFP 2907 Power MOSFET N-Channel 209A 75V. SKU. A-094. $3.49. Sign up for price alert . Subscribe. In stock Qty Available: 3988888 . Qty. Add to Cart. Add to Wishlist. Be the first to review this product . Quick Overview. IR - Get It Fast - Same Day Shipping ... WebIRFP2907 Product details Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing …

WebSingle FETs, MOSFETs Infineon Technologies IRFP2907PBF Image shown is a representation only. Exact specifications should be obtained from the product data sheet. …

WebIRFP2907 Datasheet (HTML) - International Rectifier IRFP2907 Product details Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. csh259aWebirf2807strr irf6218strl irf7471 irfp2907 irfs4710trl irlml5103tr irf2807strrhr irf6218strlhr irf7471hr irfp2907hr irfs4710trlhr irlml5103trhr irf2807z irf6218strr irf7501tr irfp3710 irfs52n15d irlml6302tr irf2807zhr irf6218strrhr irf7501trhr irfp3710hr irfs52n15dhr irlml6302trhr irf3205 irf640n irf7604tr irfp9140n irfu5505 irlms1503tr ... csh287aWebJun 3, 2024 · Of the 40 alleged gang members named in the indictment, 38 are in custody; two remain on the loose, including one alleged killer. According to the indictment, the Vice … csh284aWebIRFP2907PBF Infineon IRFP2907PBF Infineon Mosfet, Power; N-ch; Vdss 75V; Rds(on) 4.5MILLIOHMS; Id 209A; TO-247AC; Pd 470W; -55DE MOSFETs Buy NowDatasheet Tech … csh257aWebFormed in 2024 by packaging industry leaders BWAY, MAUSER Group, National Container Group (NCG) and Industrial Container Services (ICS), we're Mauser Packaging Solutions. … each of you may have one piece of candyWebIRFP2907 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 100 200 300 400 500 600 700 0 4 8 12 16 20 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS 20000 FOR TEST ... csh228aWebIRFP2907 HEXFET® Power MOSFET Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast eachof什么意思